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BF1211WR,115

MOSFET N-CH DUAL GATE 6V SOT343R


  • Manufacturer: NXP USA Inc.
  • Nocochips NO: 568-BF1211WR,115
  • Package: SC-82A, SOT-343
  • Datasheet: PDF
  • Stock: 272
  • Description: MOSFET N-CH DUAL GATE 6V SOT343R (Kg)

Details

Tags

Parameters
Package / Case SC-82A, SOT-343
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Terminal Finish Tin (Sn)
Voltage - Rated 6V
Additional Feature LOW NOISE
HTS Code 8541.21.00.75
Subcategory FET General Purpose Power
Current Rating (Amps) 30mA
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Frequency 400MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BF1211
Pin Count 4
JESD-30 Code R-PDSO-G4
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 2
Configuration COMPLEX
Operating Mode DUAL GATE, ENHANCEMENT MODE
Case Connection SOURCE
Current - Test 15mA
Transistor Application AMPLIFIER
Transistor Type N-Channel Dual Gate
Gain 29dB
Drain Current-Max (Abs) (ID) 0.03A
DS Breakdown Voltage-Min 6V
FET Technology METAL-OXIDE SEMICONDUCTOR
Power Dissipation-Max (Abs) 0.18W
Noise Figure 0.9dB
Voltage - Test 5V
Feedback Cap-Max (Crss) 0.03 pF
RoHS Status ROHS3 Compliant
See Relate Datesheet

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