Parameters | |
---|---|
Factory Lead Time | 1 Week |
Package / Case | TO-253-4, TO-253AA |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 1996 |
JESD-609 Code | e3 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Voltage - Rated | 20V |
HTS Code | 8541.21.00.75 |
Subcategory | FET General Purpose Power |
Current Rating (Amps) | 30mA |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | 260 |
Frequency | 200MHz |
Time@Peak Reflow Temperature-Max (s) | 40 |
Base Part Number | BF994 |
Pin Count | 4 |
JESD-30 Code | R-PDSO-G4 |
Qualification Status | Not Qualified |
Operating Temperature (Max) | 150°C |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Operating Mode | DUAL GATE, DEPLETION MODE |
Case Connection | SOURCE |
Current - Test | 10mA |
Transistor Application | AMPLIFIER |
Transistor Type | N-Channel Dual Gate |
Gain | 25dB |
Drain Current-Max (Abs) (ID) | 0.03A |
DS Breakdown Voltage-Min | 20V |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Power Dissipation-Max (Abs) | 0.2W |
Noise Figure | 1dB |
Voltage - Test | 15V |
RoHS Status | ROHS3 Compliant |