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BFP640ESDH6327XTSA1

Trans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BFP640ESDH6327XTSA1
  • Package: SC-82A, SOT-343
  • Datasheet: PDF
  • Stock: 891
  • Description: Trans GP BJT NPN 4.1V 0.05A 4-Pin(3+Tab) SOT-343 T/R (Kg)

Details

Tags

Parameters
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 46GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFP640
JESD-30 Code R-PDSO-G4
Number of Elements 1
Configuration SINGLE
Power Dissipation 200mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 4.1V
Max Collector Current 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce 110 @ 30mA 3V
Collector Emitter Breakdown Voltage 4.7V
Gain 7dB ~ 30dB
Transition Frequency 45000MHz
Factory Lead Time 1 Week
Max Breakdown Voltage 4.7V
Collector Base Voltage (VCBO) 4.8V
Contact Plating Tin
Noise Figure (dB Typ @ f) 0.6dB ~ 2dB @ 150MHz ~ 10GHz
RoHS Status ROHS3 Compliant
Mount Surface Mount
Lead Free Lead Free
Mounting Type Surface Mount
Package / Case SC-82A, SOT-343
Transistor Element Material SILICON GERMANIUM CARBON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2003
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
ECCN Code EAR99
Max Power Dissipation 200mW
See Relate Datesheet

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