Parameters | |
---|---|
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Frequency | 46GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BFP640 |
JESD-30 Code | R-PDSO-G4 |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 200mW |
Transistor Application | AMPLIFIER |
Halogen Free | Halogen Free |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 4.1V |
Max Collector Current | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA 3V |
Collector Emitter Breakdown Voltage | 4.7V |
Gain | 7dB ~ 30dB |
Transition Frequency | 45000MHz |
Factory Lead Time | 1 Week |
Max Breakdown Voltage | 4.7V |
Collector Base Voltage (VCBO) | 4.8V |
Contact Plating | Tin |
Noise Figure (dB Typ @ f) | 0.6dB ~ 2dB @ 150MHz ~ 10GHz |
RoHS Status | ROHS3 Compliant |
Mount | Surface Mount |
Lead Free | Lead Free |
Mounting Type | Surface Mount |
Package / Case | SC-82A, SOT-343 |
Transistor Element Material | SILICON GERMANIUM CARBON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2003 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Max Power Dissipation | 200mW |