Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 4-SMD, Flat Leads |
Number of Pins | 4 |
Transistor Element Material | SILICON GERMANIUM |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2004 |
JESD-609 Code | e3 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Additional Feature | LOW NOISE, HIGH RELIABILITY |
Max Power Dissipation | 200mW |
Terminal Position | DUAL |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Frequency | 40GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BFP640 |
Number of Elements | 1 |
Configuration | SINGLE |
Power Dissipation | 200mW |
Transistor Application | AMPLIFIER |
Halogen Free | Halogen Free |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 4V |
Max Collector Current | 50mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA 3V |
Collector Emitter Breakdown Voltage | 4.5V |
Gain | 23dB |
Transition Frequency | 40000MHz |
Max Breakdown Voltage | 4.5V |
Collector Base Voltage (VCBO) | 13V |
Emitter Base Voltage (VEBO) | 1.2V |
Collector-Base Capacitance-Max | 0.2pF |
Noise Figure (dB Typ @ f) | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |