BFP640H6327XTSA1
| Parameters | |
|---|---|
| Transition Frequency | 40000MHz |
| Max Breakdown Voltage | 4.5V |
| Collector Base Voltage (VCBO) | 13V |
| Emitter Base Voltage (VEBO) | 1.2V |
| Collector-Base Capacitance-Max | 0.2pF |
| Noise Figure (dB Typ @ f) | 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-82A, SOT-343 |
| Number of Pins | 4 |
| Transistor Element Material | SILICON GERMANIUM |
| Operating Temperature | 150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2005 |
| JESD-609 Code | e3 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Matte Tin (Sn) |
| Additional Feature | LOW NOISE, HIGH RELIABILITY |
| Max Power Dissipation | 200mW |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 40GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BFP640 |
| Number of Elements | 1 |
| Configuration | SINGLE |
| Power Dissipation | 200mW |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 4V |
| Max Collector Current | 50mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 110 @ 30mA 3V |
| Collector Emitter Breakdown Voltage | 4V |
| Gain | 12.5dB |
| Voltage - Collector Emitter Breakdown (Max) | 4.5V |
See Relate Datesheet
