Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | 150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Subcategory | Other Transistors |
Voltage - Rated DC | 15V |
Max Power Dissipation | 700mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Current Rating | 210mA |
Frequency | 5GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BFR106 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Power Dissipation | 700mW |
Transistor Application | AMPLIFIER |
Halogen Free | Not Halogen Free |
Polarity/Channel Type | NPN |
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 16V |
Max Collector Current | 210mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 70mA 8V |
Collector Emitter Breakdown Voltage | 15V |
Gain | 8.5dB ~ 13dB |
Transition Frequency | 5000MHz |
Max Breakdown Voltage | 12V |
Collector Base Voltage (VCBO) | 20V |
Emitter Base Voltage (VEBO) | 3V |
hFE Min | 70 |
Max Junction Temperature (Tj) | 150°C |
Noise Figure (dB Typ @ f) | 1.8dB ~ 3dB @ 900MHz ~ 1.8Ghz |
Height | 1.1mm |
Length | 2.9mm |
Width | 1.3mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |