BFR840L3RHESDE6327XTSA1
| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 1 Week |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SC-101, SOT-883 |
| Number of Pins | 3 |
| Transistor Element Material | SILICON GERMANIUM |
| Operating Temperature | 150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2012 |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Max Power Dissipation | 75mW |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Frequency | 75GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | AEC-Q101 |
| Number of Elements | 1 |
| Element Configuration | Single |
| Case Connection | EMITTER |
| Transistor Application | AMPLIFIER |
| Halogen Free | Halogen Free |
| Polarity/Channel Type | NPN |
| Transistor Type | NPN |
| Collector Emitter Voltage (VCEO) | 2.25V |
| Max Collector Current | 35mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 10mA 1.8V |
| Collector Emitter Breakdown Voltage | 2.6V |
| Gain | 27dB |
| Transition Frequency | 75000MHz |
| Max Breakdown Voltage | 2.6V |
| Collector Base Voltage (VCBO) | 2.9V |
| Emitter Base Voltage (VEBO) | 2.9V |
| Continuous Collector Current | 35mA |
| Noise Figure (dB Typ @ f) | 0.5dB @ 450MHz |
See Relate Datesheet
