Parameters | |
---|---|
Transistor Type | NPN |
Collector Emitter Voltage (VCEO) | 15V |
Max Collector Current | 25mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 25mA 1V |
Collector Emitter Breakdown Voltage | 15V |
Transition Frequency | 1300MHz |
Max Breakdown Voltage | 15V |
Collector Base Voltage (VCBO) | 25V |
Emitter Base Voltage (VEBO) | 2.5V |
Highest Frequency Band | ULTRA HIGH FREQUENCY B |
Collector-Base Capacitance-Max | 1.5pF |
Noise Figure (dB Typ @ f) | 4.5dB @ 500MHz |
Height | 1mm |
Length | 3.05mm |
Width | 1.4mm |
RoHS Status | Non-RoHS Compliant |
Lead Free | Contains Lead |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | TO-236-3, SC-59, SOT-23-3 |
Weight | 200.998119mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2012 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
HTS Code | 8541.21.00.75 |
Voltage - Rated DC | 15V |
Max Power Dissipation | 330mW |
Terminal Position | DUAL |
Terminal Form | GULL WING |
Reach Compliance Code | unknown |
Current Rating | 25mA |
Base Part Number | BFS17 |
JESD-30 Code | R-PDSO-G3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Element Configuration | Single |
Transistor Application | AMPLIFIER |
Gain Bandwidth Product | 1.3 GHz |
Polarity/Channel Type | NPN |