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BFS481H6327XTSA1

RF Bipolar Transistors RF BIP TRANSISTOR


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BFS481H6327XTSA1
  • Package: 6-VSSOP, SC-88, SOT-363
  • Datasheet: PDF
  • Stock: 232
  • Description: RF Bipolar Transistors RF BIP TRANSISTOR (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-VSSOP, SC-88, SOT-363
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Max Power Dissipation 175mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Frequency 8GHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BFS481
Reference Standard AEC-Q101
Number of Elements 2
Polarity NPN
Power Dissipation 175mW
Transistor Application AMPLIFIER
Halogen Free Halogen Free
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 12V
Max Collector Current 20mA
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 5mA 8V
Collector Emitter Breakdown Voltage 12V
Gain 20dB
Transition Frequency 8000MHz
Max Breakdown Voltage 12V
Collector Base Voltage (VCBO) 20V
Emitter Base Voltage (VEBO) 2V
Collector-Base Capacitance-Max 0.4pF
Noise Figure (dB Typ @ f) 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
Height 800μm
Length 2mm
Width 1.25mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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