banner_page

BLF6G10L-40BRN,118

RF FET LDMOS 65V 23DB SOT1112A


  • Manufacturer: Ampleon USA Inc.
  • Nocochips NO: 38-BLF6G10L-40BRN,118
  • Package: SOT-1112A
  • Datasheet: PDF
  • Stock: 232
  • Description: RF FET LDMOS 65V 23DB SOT1112A (Kg)

Details

Tags

Parameters
Frequency 788.5MHz~823.5MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLF6G10
Reference Standard IEC-60134
JESD-30 Code S-CQFM-X6
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Current - Test 390mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual), Common Source
Gain 23dB
Drain Current-Max (Abs) (ID) 11A
DS Breakdown Voltage-Min 65V
Power - Output 2.5W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status Non-RoHS Compliant
Package / Case SOT-1112A
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Voltage - Rated 65V
Current Rating (Amps) 11A
Terminal Position QUAD
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good