BLF6G27L-50BN,112
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Package / Case | SOT-1112A |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tray |
| Published | 2010 |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Voltage - Rated | 65V |
| Terminal Position | QUAD |
| Terminal Form | UNSPECIFIED |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Frequency | 2.5GHz~2.7GHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Base Part Number | BLF6G27 |
| Reference Standard | IEC-60134 |
| JESD-30 Code | S-CQFM-X6 |
| Number of Elements | 2 |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| Operating Mode | ENHANCEMENT MODE |
| Current - Test | 430mA |
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS (Dual), Common Source |
| Gain | 16.5dB |
| Drain Current-Max (Abs) (ID) | 12A |
| DS Breakdown Voltage-Min | 65V |
| Power - Output | 3W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 28V |
| RoHS Status | Non-RoHS Compliant |
See Relate Datesheet
