Parameters | |
---|---|
Polarity/Channel Type | N-CHANNEL |
Transistor Type | LDMOS |
Gain | 15.5dB |
DS Breakdown Voltage-Min | 65V |
Power - Output | 20W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 30V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Package / Case | SOT-1239B |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2010 |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 6 |
ECCN Code | EAR99 |
Voltage - Rated | 65V |
Terminal Position | QUAD |
Terminal Form | UNSPECIFIED |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Frequency | 3.4GHz~3.6GHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Reference Standard | IEC-60134 |
JESD-30 Code | R-CQFP-X6 |
Number of Elements | 1 |
Configuration | SINGLE |
Operating Mode | ENHANCEMENT MODE |
Case Connection | SOURCE |
Current - Test | 600mA |
Transistor Application | AMPLIFIER |