BLP10H610Z
| Parameters | |
|---|---|
| Transistor Application | AMPLIFIER |
| Polarity/Channel Type | N-CHANNEL |
| Transistor Type | LDMOS (Dual), Common Source |
| JEDEC-95 Code | MO-229 |
| Gain | 22dB |
| DS Breakdown Voltage-Min | 104V |
| Power - Output | 10W |
| FET Technology | METAL-OXIDE SEMICONDUCTOR |
| Voltage - Test | 50V |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Package / Case | 12-VDFN Exposed Pad |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 12 |
| ECCN Code | EAR99 |
| Voltage - Rated | 104V |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | unknown |
| Frequency | 860MHz |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Reference Standard | IEC-60134 |
| JESD-30 Code | R-PDSO-N12 |
| Operating Temperature (Max) | 150°C |
| Number of Elements | 2 |
| Configuration | COMMON SOURCE, 2 ELEMENTS |
| Operating Mode | ENHANCEMENT MODE |
| Current - Test | 60mA |
See Relate Datesheet
