Parameters | |
---|---|
Transistor Type | LDMOS (Dual), Common Source |
Gain | 20.9dB |
DS Breakdown Voltage-Min | 65V |
Power - Output | 35W |
FET Technology | METAL-OXIDE SEMICONDUCTOR |
Voltage - Test | 28V |
RoHS Status | Non-RoHS Compliant |
Factory Lead Time | 1 Week |
Package / Case | SOT-1223-1 |
Surface Mount | YES |
Transistor Element Material | SILICON |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 4 |
ECCN Code | EAR99 |
Voltage - Rated | 65V |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | unknown |
Frequency | 724MHz~769MHz |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Base Part Number | BLP7G07 |
Reference Standard | IEC-60134 |
JESD-30 Code | R-PDFP-F4 |
Number of Elements | 2 |
Configuration | COMMON SOURCE, 2 ELEMENTS |
Operating Mode | ENHANCEMENT MODE |
Current - Test | 1.2A |
Transistor Application | AMPLIFIER |
Polarity/Channel Type | N-CHANNEL |