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BLP8G10S-45PGY

RF FET LDMOS 65V 20.8DB 4BESOP


  • Manufacturer: Ampleon USA Inc.
  • Nocochips NO: 38-BLP8G10S-45PGY
  • Package: 4-BESOP (0.173, 4.40mm Width)
  • Datasheet: PDF
  • Stock: 710
  • Description: RF FET LDMOS 65V 20.8DB 4BESOP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Package / Case 4-BESOP (0.173, 4.40mm Width)
Surface Mount YES
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Published 2006
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 4
ECCN Code EAR99
Voltage - Rated 65V
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Frequency 952.5MHz~957.5MHz
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number BLP8G10
Reference Standard IEC-60134
JESD-30 Code R-PDSO-G4
Number of Elements 2
Configuration COMMON SOURCE, 2 ELEMENTS
Operating Mode ENHANCEMENT MODE
Current - Test 224mA
Transistor Application AMPLIFIER
Polarity/Channel Type N-CHANNEL
Transistor Type LDMOS (Dual), Common Source
Gain 20.8dB
DS Breakdown Voltage-Min 65V
Power - Output 2.5W
FET Technology METAL-OXIDE SEMICONDUCTOR
Voltage - Test 28V
RoHS Status ROHS3 Compliant
See Relate Datesheet

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