banner_page

BMS3004-1E

MOSFET P-CH 75V 68A TO-220F-3SG


  • Manufacturer: ON Semiconductor
  • Nocochips NO: 598-BMS3004-1E
  • Package: TO-220-3 Full Pack
  • Datasheet: PDF
  • Stock: 325
  • Description: MOSFET P-CH 75V 68A TO-220F-3SG (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Surface Mount NO
Number of Pins 3
Weight 6.000006g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2W Ta 40W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection ISOLATED
Turn On Delay Time 70 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 34A, 10V
Input Capacitance (Ciss) (Max) @ Vds 13400pF @ 20V
Current - Continuous Drain (Id) @ 25°C 68A Ta
Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
Rise Time 245ns
Drain to Source Voltage (Vdss) 75V
Drive Voltage (Max Rds On,Min Rds On) 4V 10V
Vgs (Max) ±20V
Fall Time (Typ) 650 ns
Turn-Off Delay Time 1.4 μs
Continuous Drain Current (ID) 68A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -75V
Pulsed Drain Current-Max (IDM) 272A
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good