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BPW96B

BPW96 Series 850 nm ± 20° Through Hole Silicon NPN Phototransistor - T-1 3/4


  • Manufacturer: Vishay Semiconductor Opto Division
  • Nocochips NO: 879-BPW96B
  • Package: Radial, 5mm Dia (T 1 3/4)
  • Datasheet: PDF
  • Stock: 210
  • Description: BPW96 Series 850 nm ± 20° Through Hole Silicon NPN Phototransistor - T-1 3/4 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Through Hole
Mounting Type Through Hole
Package / Case Radial, 5mm Dia (T 1 3/4)
Number of Pins 2
Operating Temperature -40°C~100°C TA
Packaging Bulk
Published 2001
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 100°C
Min Operating Temperature -40°C
Max Power Dissipation 150mW
Orientation Top View
Current Rating 50mA
Number of Elements 1
Polarity NPN
Power Dissipation 150mW
Viewing Angle 40°
Power - Max 150mW
Lens Style Domed
Rise Time 2μs
Collector Emitter Voltage (VCEO) 70V
Max Collector Current 50mA
Collector Emitter Breakdown Voltage 70V
Lens Color Clear
Power Consumption 150mW
Voltage - Collector Emitter Breakdown (Max) 70V
Current - Collector (Ic) (Max) 50mA
Wavelength 850nm
Collector Emitter Saturation Voltage 300mV
Dark Current 200nA
Current - Dark (Id) (Max) 200nA
Height 8.6mm
Length 5.75mm
Width 5.75mm
Radiation Hardening No
REACH SVHC Unknown
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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