Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 453.59237mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 2012 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 23Ohm |
Additional Feature | HIGH RELIABILITY |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | WIRE |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 120mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 500mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 500mW |
FET Type | N-Channel |
Rds On (Max) @ Id, Vgs | 30 Ω @ 100mA, 5V |
Current - Continuous Drain (Id) @ 25°C | 120mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 2.6V 5V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 120mA |
Gate to Source Voltage (Vgs) | 20V |
Drain to Source Breakdown Voltage | 200V |
Feedback Cap-Max (Crss) | 7 pF |
Height | 4.01mm |
Length | 4.77mm |
Width | 2.41mm |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |