Parameters | |
---|---|
Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 day ago) |
Contact Plating | Copper, Silver, Tin |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Box (TB) |
Published | 2006 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 8Ohm |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 200V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 250mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 350mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 350mW |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8 Ω @ 100mA, 2.8V |
Vgs(th) (Max) @ Id | 1.5V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 250mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 2V 2.8V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 15 ns |
Continuous Drain Current (ID) | 250mA |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.25A |
Drain to Source Breakdown Voltage | 200V |
Height | 5.33mm |
Length | 5.2mm |
Width | 4.19mm |
Radiation Hardening | No |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |