Parameters | |
---|---|
Weight | 4.535924g |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2005 |
JESD-609 Code | e1 |
Pbfree Code | yes |
Part Status | Obsolete |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 5Ohm |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Peak Reflow Temperature (Cel) | 260 |
Current Rating | 500mA |
Time@Peak Reflow Temperature-Max (s) | 40 |
Pin Count | 3 |
Number of Elements | 1 |
Power Dissipation-Max | 350mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 350mW |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5 Ω @ 200mA, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 500mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Turn-Off Delay Time | 10 ns |
Continuous Drain Current (ID) | 500mA |
Threshold Voltage | 2V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.5A |
Drain to Source Breakdown Voltage | 60V |
Nominal Vgs | 2 V |
Height | 5.33mm |
Length | 5.2mm |
Width | 4.19mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | RoHS Compliant |
Lead Free | Lead Free |
Lifecycle Status | LAST SHIPMENTS (Last Updated: 3 days ago) |
Contact Plating | Copper, Silver, Tin |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
Surface Mount | NO |
Number of Pins | 3 |