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BS2114F-E2

Surface Mount Active EAR99 Gate Drivers ICs Inverting 2 600V V 8-SOIC (0.173, 4.40mm Width) High-Side or Low-Side


  • Manufacturer: ROHM Semiconductor
  • Nocochips NO: 687-BS2114F-E2
  • Package: 8-SOIC (0.173, 4.40mm Width)
  • Datasheet: PDF
  • Stock: 611
  • Description: Surface Mount Active EAR99 Gate Drivers ICs Inverting 2 600V V 8-SOIC (0.173, 4.40mm Width) High-Side or Low-Side (Kg)

Details

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Parameters
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Surface Mount YES
Operating Temperature -40°C~125°C TA
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Voltage - Supply 10V~20V
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Functions 1
Supply Voltage 15V
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-G8
Input Type Inverting
Rise / Fall Time (Typ) 30ns 30ns
Interface IC Type HALF BRIDGE BASED MOSFET DRIVER
Channel Type Independent
Number of Drivers 2
Turn On Time 0.37 µs
Driven Configuration High-Side or Low-Side
Gate Type IGBT, N-Channel MOSFET
High Side Driver YES
Logic Voltage - VIL, VIH 0.8V 2.6V
Turn Off Time 0.37 µs
High Side Voltage - Max (Bootstrap) 600V
Height Seated (Max) 1.71mm
Length 5mm
Width 4.4mm
RoHS Status ROHS3 Compliant

BS2114F-E2 Overview


A higher degree of flexibility is achieved by adopting its 8-SOIC (0.173, 4.40mm Width) package.A total of 2 drivers are integrated into its configuration.Surface Mount is the way in which it is mounted.In the absence of a 10V~20V supply voltage, its superiority can be demonstrated.A gate type of IGBT, N-Channel MOSFET has been used in its design.-40°C~125°C TA is the allowed temperature range for this device.Mosfet driver uses Inverting as Mosfet drivers input type.It's configured with 8 terminations.The device is specifically designed to function with a supply voltage of 15V V.HALF BRIDGE BASED MOSFET DRIVER is employed as its interface IC.Ideally, the high-side voltage should not exceed 600V.

BS2114F-E2 Features


2 drivers
Employing a gate type of IGBT, N-Channel MOSFET
High-side voltage - Max (Bootstrap) of 600V

BS2114F-E2 Applications


There are a lot of ROHM Semiconductor BS2114F-E2 gate drivers applications.

  • Power factor correction (PFC) circuits
  • UPS systems
  • White Goods - Air Conditioner, Washing Machine,
  • Pulse transformer drivers
  • High current laser/LED systems
  • serial peripheral interface (SPI), I2C
  • Driving GaN Power Transistors used in Full or Half?Bridge, LLC,
  • AC-DC Inverters
  • Solar power supplies
  • 48 V to 12 V PoL Converters, 48 V to Low Voltage Bus Converter,

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