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BS250FTA

DIODES INC. BS250FTA MOSFET Transistor, P Channel, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V


  • Manufacturer: Diodes Incorporated
  • Nocochips NO: 233-BS250FTA
  • Package: TO-236-3, SC-59, SOT-23-3
  • Datasheet: PDF
  • Stock: 943
  • Description: DIODES INC. BS250FTA MOSFET Transistor, P Channel, -90 mA, -45 V, 9 ohm, -10 V, -3.5 V (Kg)

Details

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Parameters
Published 1997
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 14Ohm
Subcategory Other Transistors
Voltage - Rated DC -45V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -90mA
Time@Peak Reflow Temperature-Max (s) 40
Pin Count 3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 330mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 330mW
Turn On Delay Time 10 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14 Ω @ 200mA, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 25pF @ 10V
Current - Continuous Drain (Id) @ 25°C 90mA Ta
Rise Time 10ns
Drain to Source Voltage (Vdss) 45V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 10 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 90mA
Threshold Voltage -3.5V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 0.09A
Nominal Vgs -3.5 V
Height 1mm
Length 2.9mm
Width 1.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
See Relate Datesheet

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