Parameters | |
---|---|
Factory Lead Time | 1 Week |
Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
Contact Plating | Copper, Silver, Tin |
Mount | Through Hole |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
Number of Pins | 3 |
Weight | 200mg |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Bulk |
Published | 1998 |
JESD-609 Code | e3 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Resistance | 2MOhm |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Voltage - Rated DC | 60V |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Current Rating | 400mA |
Base Part Number | BS270 |
Number of Elements | 1 |
Power Dissipation-Max | 625mW Ta |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 630mW |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2 Ω @ 500mA, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V |
Current - Continuous Drain (Id) @ 25°C | 400mA Ta |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 400mA |
Threshold Voltage | 2.1V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 0.4A |
Drain to Source Breakdown Voltage | 60V |
Nominal Vgs | 2.1 V |
Feedback Cap-Max (Crss) | 5 pF |
Height | 4.7mm |
Length | 4.7mm |
Width | 3.93mm |
Radiation Hardening | No |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |