Parameters | |
---|---|
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-MBCC-N3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.8W Ta 57W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.8W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1.3m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Input Capacitance (Ciss) (Max) @ Vds | 4400pF @ 12V |
Current - Continuous Drain (Id) @ 25°C | 36A Ta 163A Tc |
Gate Charge (Qg) (Max) @ Vgs | 62nC @ 10V |
Rise Time | 6.4ns |
Drain to Source Voltage (Vdss) | 25V |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 36A |
Gate to Source Voltage (Vgs) | 20V |
Pulsed Drain Current-Max (IDM) | 400A |
DS Breakdown Voltage-Min | 25V |
RoHS Status | ROHS3 Compliant |
Factory Lead Time | 1 Week |
Contact Plating | Silver |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | OptiMOS™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |