Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Surface Mount | YES |
Number of Pins | 7 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | OptiMOS™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Silver/Nickel (Ag/Ni) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
JESD-30 Code | R-MBCC-N3 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.2W Ta 78W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 78W |
Case Connection | DRAIN |
Turn On Delay Time | 21 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 2.8m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 102μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 12000pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 22A Ta 90A Tc |
Gate Charge (Qg) (Max) @ Vgs | 143nC @ 10V |
Rise Time | 9ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 38 ns |
Continuous Drain Current (ID) | 90A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Drain Current-Max (Abs) (ID) | 22A |
Drain-source On Resistance-Max | 0.0028Ohm |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 360A |
Avalanche Energy Rating (Eas) | 590 mJ |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |