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BSB028N06NN3GXUMA1

MOSFET N-CH 60V 22A WDSON-2


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSB028N06NN3GXUMA1
  • Package: 3-WDSON
  • Datasheet: PDF
  • Stock: 658
  • Description: MOSFET N-CH 60V 22A WDSON-2 (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 3-WDSON
Surface Mount YES
Number of Pins 7
Transistor Element Material SILICON
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Silver/Nickel (Ag/Ni)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position BOTTOM
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-MBCC-N3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.2W Ta 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
Turn On Delay Time 21 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 4V @ 102μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 12000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 22A Ta 90A Tc
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Rise Time 9ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Turn-Off Delay Time 38 ns
Continuous Drain Current (ID) 90A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 22A
Drain-source On Resistance-Max 0.0028Ohm
Drain to Source Breakdown Voltage 60V
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 590 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
See Relate Datesheet

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