BSB056N10NN3GXUMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Contact Plating | Silver |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Pin Count | 3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 78W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.8W |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.6m Ω @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 100μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 5500pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 9A Ta 83A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 10V |
| Rise Time | 9ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 9A |
| Threshold Voltage | 2.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 100V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain-source On Resistance-Max | 0.0056Ohm |
| Avalanche Energy Rating (Eas) | 450 mJ |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
See Relate Datesheet
