BSB104N08NP3GXUSA1
| Parameters | |
|---|---|
| Pulsed Drain Current-Max (IDM) | 200A |
| DS Breakdown Voltage-Min | 80V |
| Avalanche Energy Rating (Eas) | 110 mJ |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 3-WDSON |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -40°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | OptiMOS™ |
| JESD-609 Code | e4 |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Silver/Nickel (Ag/Ni) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | BOTTOM |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 2.8W Ta 42W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 10.4m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 40μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 2100pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 13A Ta 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Rise Time | 4ns |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 50A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0104Ohm |
See Relate Datesheet
