Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 3-WDSON |
Number of Pins | 3 |
Transistor Element Material | SILICON |
Operating Temperature | -40°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2012 |
Series | OptiMOS™ |
JESD-609 Code | e4 |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Silver/Nickel (Ag/Ni) |
Subcategory | FET General Purpose Powers |
Technology | MOSFET (Metal Oxide) |
Terminal Position | BOTTOM |
Terminal Form | NO LEAD |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.8W Ta 57W Tc |
Operating Mode | ENHANCEMENT MODE |
Case Connection | DRAIN |
Turn On Delay Time | 9 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 28m Ω @ 30A, 10V |
Vgs(th) (Max) @ Id | 4V @ 60μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1600pF @ 75V |
Current - Continuous Drain (Id) @ 25°C | 9A Ta 30A Tc |
Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
Rise Time | 6ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3 ns |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | 30A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 150V |
Drain Current-Max (Abs) (ID) | 9A |
Drain-source On Resistance-Max | 0.028Ohm |
Pulsed Drain Current-Max (IDM) | 120A |
Avalanche Energy Rating (Eas) | 120 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Lead Free |