Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2003 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 3 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Subcategory | FET General Purpose Power |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F3 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta 139W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 1m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 6800pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 38A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 95nC @ 10V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 9 ns |
Turn-Off Delay Time | 46 ns |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 1.2V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 40V |
Drain to Source Breakdown Voltage | 40V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 330 mJ |
Max Junction Temperature (Tj) | 150°C |
Height | 1.1mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |