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BSC010NE2LSATMA1

BSC010NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC010NE2LSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 977
  • Description: BSC010NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Supplier Device Package PG-TDSON-8-7
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 2.5W Ta 96W Tc
Power Dissipation 96W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 12V
Current - Continuous Drain (Id) @ 25°C 39A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 25V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 39A
Gate to Source Voltage (Vgs) 20V
Drain to Source Resistance 800μOhm
RoHS Status ROHS3 Compliant
See Relate Datesheet

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