BSC014N04LSIATMA1
| Parameters | |
|---|---|
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Max Dual Supply Voltage | 40V |
| Drain-source On Resistance-Max | 0.002Ohm |
| Drain to Source Breakdown Voltage | 40V |
| Pulsed Drain Current-Max (IDM) | 400A |
| Avalanche Energy Rating (Eas) | 90 mJ |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Contains Lead |
| Factory Lead Time | 1 Week |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Number of Pins | 8 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Reach Compliance Code | not_compliant |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.5W Ta 96W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.45m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Halogen Free | Halogen Free |
| Input Capacitance (Ciss) (Max) @ Vds | 4000pF @ 20V |
| Current - Continuous Drain (Id) @ 25°C | 31A Ta 100A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Turn-Off Delay Time | 55 ns |
| Continuous Drain Current (ID) | 100A |
See Relate Datesheet
