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BSC014NE2LSIATMA1

MOSFET OptiMOS Power MOSFET


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC014NE2LSIATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 898
  • Description: MOSFET OptiMOS Power MOSFET (Kg)

Details

Tags

Parameters
Max Dual Supply Voltage 25V
Drain-source On Resistance-Max 0.002Ohm
Pulsed Drain Current-Max (IDM) 400A
Factory Lead Time 1 Week
Avalanche Energy Rating (Eas) 50 mJ
Mount Surface Mount
RoHS Status ROHS3 Compliant
Mounting Type Surface Mount
Lead Free Contains Lead
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 74W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.4m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 12V
Current - Continuous Drain (Id) @ 25°C 33A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.6 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 33A
Gate to Source Voltage (Vgs) 20V
See Relate Datesheet

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