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BSC028N06NSTATMA1

DIFFERENTIATED MOSFETS


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC028N06NSTATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 953
  • Description: DIFFERENTIATED MOSFETS (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 3W Ta 100W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.8m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 3375pF @ 30V
Current - Continuous Drain (Id) @ 25°C 24A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.0028Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 60V
Avalanche Energy Rating (Eas) 100 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

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