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BSC030N03LSGATMA1

Trans MOSFET N-CH 30V 23A 8-Pin TDSON


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC030N03LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 279
  • Description: Trans MOSFET N-CH 30V 23A 8-Pin TDSON (Kg)

Details

Tags

Parameters
Rise Time 5.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4.8 ns
Turn-Off Delay Time 29 ns
Continuous Drain Current (ID) 23A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0047Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 75 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 69W
Case Connection DRAIN
Turn On Delay Time 7.3 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 4300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V
See Relate Datesheet

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