banner_page

BSC030N04NSGATMA1

Trans MOSFET N-CH 40V 23A 8-Pin TDSON EP T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC030N04NSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 228
  • Description: Trans MOSFET N-CH 40V 23A 8-Pin TDSON EP T/R (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 83W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 49μA
Input Capacitance (Ciss) (Max) @ Vds 4900pF @ 20V
Current - Continuous Drain (Id) @ 25°C 23A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 61nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 23A
Drain-source On Resistance-Max 0.003Ohm
Pulsed Drain Current-Max (IDM) 400A
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 115 mJ
RoHS Status ROHS3 Compliant
See Relate Datesheet

Write a review

Note: HTML is not translated!
    Bad           Good