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BSC031N06NS3GATMA1

Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC031N06NS3GATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 810
  • Description: Trans MOSFET N-CH 60V 100A 8-Pin TDSON T/R (Kg)

Details

Tags

Parameters
Power Dissipation-Max 2.5W Ta 139W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 38 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 3.1m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 93μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 161ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 16 ns
Turn-Off Delay Time 63 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 60V
Drain Current-Max (Abs) (ID) 22A
Pulsed Drain Current-Max (IDM) 400A
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
See Relate Datesheet

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