Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Cut Tape (CT) |
Published | 2012 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Reach Compliance Code | not_compliant |
Pin Count | 8 |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta 69W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 12 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 3.9m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 2.8V @ 36μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2000pF @ 30V |
Current - Continuous Drain (Id) @ 25°C | 19A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V |
Rise Time | 12ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 7 ns |
Turn-Off Delay Time | 20 ns |
Continuous Drain Current (ID) | 100A |
Threshold Voltage | 2.1V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 60V |
Drain-source On Resistance-Max | 0.0039Ohm |
Drain to Source Breakdown Voltage | 60V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 50 mJ |
Max Junction Temperature (Tj) | 150°C |
Feedback Cap-Max (Crss) | 44 pF |
Height | 1.1mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |