Parameters | |
---|---|
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 4.6m Ω @ 50A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 110μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 4100pF @ 10V |
Current - Continuous Drain (Id) @ 25°C | 19A Ta 80A Tc |
Gate Charge (Qg) (Max) @ Vgs | 27.6nC @ 4.5V |
Rise Time | 117ns |
Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
Vgs (Max) | ±12V |
Fall Time (Typ) | 6 ns |
Turn-Off Delay Time | 34 ns |
Continuous Drain Current (ID) | 80A |
Threshold Voltage | 950mV |
Gate to Source Voltage (Vgs) | 12V |
Drain Current-Max (Abs) (ID) | 19A |
Drain-source On Resistance-Max | 0.0046Ohm |
Drain to Source Breakdown Voltage | 20V |
Pulsed Drain Current-Max (IDM) | 200A |
Avalanche Energy Rating (Eas) | 151 mJ |
Nominal Vgs | 950 mV |
Height | 1.1mm |
Factory Lead Time | 1 Week |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Surface Mount | YES |
Length | 6.35mm |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | OptiMOS™ |
Width | 5.35mm |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
Number of Terminations | 5 |
REACH SVHC | No SVHC |
ECCN Code | EAR99 |
Terminal Finish | Tin (Sn) |
Additional Feature | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE |
RoHS Status | ROHS3 Compliant |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | R-PDSO-F5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Power Dissipation-Max | 2.8W Ta 48W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 48W |
Case Connection | DRAIN |
Turn On Delay Time | 15 ns |
FET Type | N-Channel |