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BSC0500NSIATMA1

MOSFET N-CH 30V 35A TDSON-8


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC0500NSIATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 666
  • Description: MOSFET N-CH 30V 35A TDSON-8 (Kg)

Details

Tags

Parameters
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 69W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 1.3m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3300pF @ 15V
Current - Continuous Drain (Id) @ 25°C 35A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 52nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Max Dual Supply Voltage 30V
Drain Current-Max (Abs) (ID) 35A
Drain-source On Resistance-Max 0.0017Ohm
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 40 mJ
See Relate Datesheet

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