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BSC059N04LSGATMA1

BSC059N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC059N04LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 103
  • Description: BSC059N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 50W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 50W
Case Connection DRAIN
Turn On Delay Time 5.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 2V @ 23μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 3200pF @ 20V
Current - Continuous Drain (Id) @ 25°C 16A Ta 73A Tc
Gate Charge (Qg) (Max) @ Vgs 40nC @ 10V
Rise Time 3.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3.8 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 73A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain Current-Max (Abs) (ID) 16A
Drain-source On Resistance-Max 0.0059Ohm
Pulsed Drain Current-Max (IDM) 292A
Avalanche Energy Rating (Eas) 25 mJ
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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