Parameters | |
---|---|
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | OptiMOS™ |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Pin Count | 8 |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 2.5W Ta 50W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 50W |
Case Connection | DRAIN |
Turn On Delay Time | 5.6 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 5.9m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 2V @ 23μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 3200pF @ 20V |
Current - Continuous Drain (Id) @ 25°C | 16A Ta 73A Tc |
Gate Charge (Qg) (Max) @ Vgs | 40nC @ 10V |
Rise Time | 3.4ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3.8 ns |
Turn-Off Delay Time | 23 ns |
Continuous Drain Current (ID) | 73A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 40V |
Drain Current-Max (Abs) (ID) | 16A |
Drain-source On Resistance-Max | 0.0059Ohm |
Pulsed Drain Current-Max (IDM) | 292A |
Avalanche Energy Rating (Eas) | 25 mJ |
Radiation Hardening | No |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |