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BSC082N10LSGATMA1

Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC082N10LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 482
  • Description: Trans MOSFET N-CH 100V 13.8A 8-Pin TDSON EP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 8.2m Ω @ 100A, 10V
Vgs(th) (Max) @ Id 2.4V @ 110μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7400pF @ 50V
Current - Continuous Drain (Id) @ 25°C 13.8A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 104nC @ 10V
Rise Time 24ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 400A
Avalanche Energy Rating (Eas) 377 mJ
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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