Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Not For New Designs |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Additional Feature | LOGIC LEVEL COMPATIBLE |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | R-PDSO-F5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 156W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 156W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 8.2m Ω @ 100A, 10V |
Vgs(th) (Max) @ Id | 2.4V @ 110μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 7400pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 13.8A Ta 100A Tc |
Gate Charge (Qg) (Max) @ Vgs | 104nC @ 10V |
Rise Time | 24ns |
Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 100A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 100V |
Pulsed Drain Current-Max (IDM) | 400A |
Avalanche Energy Rating (Eas) | 377 mJ |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |