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BSC0909NSATMA1

MOSFET N-CH 34V 44A 8TDSON


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC0909NSATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 139
  • Description: MOSFET N-CH 34V 44A 8TDSON (Kg)

Details

Tags

Parameters
Rise Time 4.4ns
Drain to Source Voltage (Vdss) 34V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5.4 ns
Turn-Off Delay Time 8.9 ns
Factory Lead Time 1 Week
Continuous Drain Current (ID) 44A
Mount Surface Mount
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Drain Current-Max (Abs) (ID) 12A
Drain-source On Resistance-Max 0.0091Ohm
Transistor Element Material SILICON
Pulsed Drain Current-Max (IDM) 176A
Avalanche Energy Rating (Eas) 10 mJ
Operating Temperature -55°C~150°C TJ
RoHS Status ROHS3 Compliant
Packaging Tape & Reel (TR)
Lead Free Contains Lead
Published 2013
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 27W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Turn On Delay Time 9.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.2m Ω @ 20A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1110pF @ 15V
Current - Continuous Drain (Id) @ 25°C 12A Ta 44A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
See Relate Datesheet

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