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BSC093N04LSGATMA1

BSC093N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC093N04LSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 611
  • Description: BSC093N04LSGATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 35W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 35W
Case Connection DRAIN
Turn On Delay Time 3.6 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 9.3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id 2V @ 14μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 20V
Current - Continuous Drain (Id) @ 25°C 13A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 2.4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 2.8 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 13A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 40V
Drain-source On Resistance-Max 0.0093Ohm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
See Relate Datesheet

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