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BSC100N10NSFGATMA1

Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC100N10NSFGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 862
  • Description: Trans MOSFET N-CH 100V 11.4A 8-Pin TDSON (Kg)

Details

Tags

Parameters
Operating Temperature -55°C~150°C TJ
Fall Time (Typ) 7 ns
Packaging Tape & Reel (TR)
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 11.4A
Published 1999
Series OptiMOS™
Gate to Source Voltage (Vgs) 20V
JESD-609 Code e3
Max Dual Supply Voltage 100V
Pulsed Drain Current-Max (IDM) 360A
Avalanche Energy Rating (Eas) 377 mJ
Pbfree Code no
REACH SVHC No SVHC
Part Status Active
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Contains Lead
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 156W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 156W
Case Connection DRAIN
Turn On Delay Time 18 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 10m Ω @ 25A, 10V
Factory Lead Time 1 Week
Vgs(th) (Max) @ Id 4V @ 110μA
Mount Surface Mount
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2900pF @ 50V
Mounting Type Surface Mount
Current - Continuous Drain (Id) @ 25°C 11.4A Ta 90A Tc
Package / Case 8-PowerTDFN
Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
Number of Pins 8
Rise Time 23ns
Transistor Element Material SILICON
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
See Relate Datesheet

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