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BSC110N15NS5ATMA1

BSC110N15NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC110N15NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 458
  • Description: BSC110N15NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

Tags

Parameters
Max Junction Temperature (Tj) 150°C
Drain to Source Resistance 9mOhm
Height 1.1mm
RoHS Status ROHS3 Compliant
Factory Lead Time 1 Week
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Supplier Device Package PG-TDSON-8-7
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series OptiMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 125W Tc
Power Dissipation 125W
Turn On Delay Time 10.3 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 11mOhm @ 38A, 10V
Vgs(th) (Max) @ Id 4.6V @ 91μA
Input Capacitance (Ciss) (Max) @ Vds 2770pF @ 75V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 150V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Turn-Off Delay Time 14.5 ns
Continuous Drain Current (ID) 76A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
See Relate Datesheet

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