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BSC117N08NS5ATMA1

BSC117N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC117N08NS5ATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 990
  • Description: BSC117N08NS5ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi (Kg)

Details

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Parameters
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series OptiMOS™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 2.5W Ta 50W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 2.5W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 11.7m Ω @ 25A, 10V
Vgs(th) (Max) @ Id 3.8V @ 22μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 40V
Current - Continuous Drain (Id) @ 25°C 49A Tc
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 16 ns
Continuous Drain Current (ID) 19A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 80V
Drain to Source Breakdown Voltage 80V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Factory Lead Time 1 Week
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Weight 506.605978mg
See Relate Datesheet

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