Parameters | |
---|---|
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2013 |
Series | OptiMOS™ |
Pbfree Code | yes |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
JESD-30 Code | R-PDSO-F5 |
Number of Elements | 1 |
Number of Channels | 1 |
Power Dissipation-Max | 2.5W Ta 50W Tc |
Element Configuration | Single |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 2.5W |
Case Connection | DRAIN |
Turn On Delay Time | 10 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 11.7m Ω @ 25A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 22μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 1300pF @ 40V |
Current - Continuous Drain (Id) @ 25°C | 49A Tc |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
Rise Time | 4ns |
Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 3 ns |
Turn-Off Delay Time | 16 ns |
Continuous Drain Current (ID) | 19A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 80V |
Drain to Source Breakdown Voltage | 80V |
Max Junction Temperature (Tj) | 150°C |
Height | 1.1mm |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Weight | 506.605978mg |