Parameters | |
---|---|
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |
Factory Lead Time | 1 Week |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2009 |
Series | OptiMOS™ |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | R-PDSO-F5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 114W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 114W |
Case Connection | DRAIN |
Turn On Delay Time | 21 ns |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 11.8m Ω @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 70μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 3700pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 11A Ta 71A Tc |
Gate Charge (Qg) (Max) @ Vgs | 56nC @ 10V |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Fall Time (Typ) | 8 ns |
Turn-Off Delay Time | 32 ns |
Continuous Drain Current (ID) | 11A |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 100V |