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BSC120N03MSGATMA1

Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC120N03MSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 387
  • Description: Trans MOSFET N-CH 30V 11A 8-Pin TDSON EP (Kg)

Details

Tags

Parameters
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 5 ns
Turn-Off Delay Time 7 ns
Continuous Drain Current (ID) 11A
Factory Lead Time 1 Week
Gate to Source Voltage (Vgs) 16V
Max Dual Supply Voltage 30V
Contact Plating Tin
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2002
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Pin Count 8
JESD-30 Code R-PDSO-F5
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 28W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 28W
Case Connection DRAIN
Turn On Delay Time 7.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 12m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 1500pF @ 15V
Current - Continuous Drain (Id) @ 25°C 11A Ta 39A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Rise Time 4.4ns
See Relate Datesheet

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