BSC159N10LSFGATMA1
| Parameters | |
|---|---|
| Factory Lead Time | 1 Week |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerTDFN |
| Surface Mount | YES |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | OptiMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | no |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | LOGIC LEVEL COMPATIBLE |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | FLAT |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Pin Count | 8 |
| JESD-30 Code | R-PDSO-F5 |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 114W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 15.9m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 72μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2500pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A Ta 63A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Drain Current-Max (Abs) (ID) | 9.4A |
| Drain-source On Resistance-Max | 0.0159Ohm |
| Pulsed Drain Current-Max (IDM) | 252A |
| DS Breakdown Voltage-Min | 100V |
| Avalanche Energy Rating (Eas) | 155 mJ |
| RoHS Status | ROHS3 Compliant |
See Relate Datesheet
