Parameters | |
---|---|
Factory Lead Time | 1 Week |
Contact Plating | Tin |
Mount | Surface Mount |
Mounting Type | Surface Mount |
Package / Case | 8-PowerTDFN |
Number of Pins | 8 |
Transistor Element Material | SILICON |
Operating Temperature | -55°C~150°C TJ |
Packaging | Tape & Reel (TR) |
Published | 2011 |
Series | OptiMOS™ |
JESD-609 Code | e3 |
Pbfree Code | no |
Part Status | Active |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Number of Terminations | 5 |
ECCN Code | EAR99 |
Technology | MOSFET (Metal Oxide) |
Terminal Position | DUAL |
Terminal Form | FLAT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Reach Compliance Code | not_compliant |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Pin Count | 8 |
JESD-30 Code | R-PDSO-F5 |
Qualification Status | Not Qualified |
Number of Elements | 1 |
Configuration | SINGLE WITH BUILT-IN DIODE |
Power Dissipation-Max | 78W Tc |
Operating Mode | ENHANCEMENT MODE |
Power Dissipation | 78W |
Case Connection | DRAIN |
FET Type | N-Channel |
Transistor Application | SWITCHING |
Rds On (Max) @ Id, Vgs | 19.6m Ω @ 45A, 10V |
Vgs(th) (Max) @ Id | 4V @ 42μA |
Halogen Free | Halogen Free |
Input Capacitance (Ciss) (Max) @ Vds | 2300pF @ 50V |
Current - Continuous Drain (Id) @ 25°C | 8.5A Ta 45A Tc |
Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
Rise Time | 22ns |
Drive Voltage (Max Rds On,Min Rds On) | 10V |
Vgs (Max) | ±20V |
Continuous Drain Current (ID) | 45A |
Threshold Voltage | 3V |
Gate to Source Voltage (Vgs) | 20V |
Max Dual Supply Voltage | 100V |
Avalanche Energy Rating (Eas) | 60 mJ |
REACH SVHC | No SVHC |
RoHS Status | ROHS3 Compliant |
Lead Free | Contains Lead |