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BSC196N10NSGATMA1

Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON EP


  • Manufacturer: Infineon Technologies
  • Nocochips NO: 376-BSC196N10NSGATMA1
  • Package: 8-PowerTDFN
  • Datasheet: PDF
  • Stock: 933
  • Description: Trans MOSFET N-CH 100V 8.5A 8-Pin TDSON EP (Kg)

Details

Tags

Parameters
Factory Lead Time 1 Week
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series OptiMOS™
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
JESD-30 Code R-PDSO-F5
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 78W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 78W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 19.6m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 42μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
Current - Continuous Drain (Id) @ 25°C 8.5A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 45A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 100V
Avalanche Energy Rating (Eas) 60 mJ
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
See Relate Datesheet

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